Thermal Stability of GaAs/InAs/GaAs Heterostructure Studied by X-Ray Crystal Truncation Rod Scattering Measurement

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  • Tabuchi Masao
    Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-Cho, Chikusa-Ku, Nagoya 464-8603, Japan
  • Araki Munetaka
    Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-Cho, Chikusa-Ku, Nagoya 464-8603, Japan
  • Takeda Yoshikazu
    Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-Cho, Chikusa-Ku, Nagoya 464-8603, Japan

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  • Indium Phosphide & Related Materials. Thermal Stability of GaAs/InAs/GaAs Heterostructure Studied by X-Ray Crystal Truncation Rod Scattering Measurement.

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The distribution of In in a GaAs/InAs(1 monolayer)/GaAs structure was investigated by X-ray crystal truncation rod scattering measurement. The InAs layer and the GaAs cap layer were grown at 480°C on the GaAs buffer layer grown at 590°C. After the growth, the samples were annealed at different temperatures, and the thermal stability of the GaAs/InAs/GaAs structure was investigated. In atoms were surely confined in 1 ML(monolayer) when the sample was as grown. However, when the sample was annealed at 590°C only for 10 min, the In atoms widely spread in the GaAs layers. The diffusion coefficient of In in the GaAs layer grown at 480°C was larger than that in the GaAs layer grown at 590°C. The difference is considered to be caused by the Ga vacancies generated in the GaAs layer grown at 480°C.

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