Ferroelectric Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Films on Si(100) with An Ultrathin Buffer Layer of Silicon Oxynitride: A Comparative Study Using X-Ray Photoelectron Spectroscopy

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  • Rokuta Eiji
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
  • Hotta Yasushi
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
  • Choi Jae-hyoung
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
  • Tabata Hitoshi
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan PRESTO, Japan Science and Technology Corporation, Honcho 4-1-8, Kawaguchi, Saitama 332-0012, Japan
  • Kobayashi Hikaru
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
  • Kawai Tomoji
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

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  • Ferroelectric Bi4Ti3O12 Films on Si(100) with An Ultrathin Buffer Layer of Silicon Oxynitride: A Comparative Study Using X-Ray Photoelectron Spectroscopy.

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説明

Using pulsed-laser deposition, ferroelectric Bi4Ti3O12 (BiT) films were grown on Si(100) with and without an ultrathin buffer layer of silicon oxynitride (SiON), and the interface states were investigated using X-ray photoelectron spectroscopy. For both as-grown specimens, the additional oxidation of the interface Si was observed, and their thicknesses were almost identical. Due to the postannealing at 700°C in an oxygen ambient, on the other hand, a large difference in the Si oxidation was observed between the two specimens. The BiT films on Si(100) without the SiON buffer layer failed in preventing the significant development of the interfacial Si oxidation. On the contrary, it was clarified that the 1.3-nm-thick SiON buffer layers suppressed the additional oxidation to less than 3.5 nm.

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