Temperature Dependence of the Thermal Conductivity and Phonon Scattering Time of a Bulk GaN Crystal.

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  • Kamano Masaru
    Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
  • Haraguchi Masanobu
    Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
  • Niwaki Takahiro
    Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
  • Fukui Masuo
    Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
  • Kuwahara Minoru
    Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
  • Okamoto Toshihiro
    Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
  • Mukai Takashi
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

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説明

We have measured photothermal signals of a bulk GaN crystal by the photothermal divergence (PTD) method in the temperature range from 110 K to 370 K. The thermal conductivity and the scattering time of phonons contributing to the thermal conductivity have been evaluated from the photothermal signals. A phonon-defect interaction has been expected to play a crucial role in determining the thermal properties of the sample employed here in the above temperature range.

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