Gettering on Cavities Induced by Helium Implantation in Si: The Case of Boron.

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  • Alquier Daniel
    L.M.P, Université de Tours, 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France
  • Roqueta Fabrice
    L.M.P, Université de Tours, 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France STMicroelectronics, 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France
  • Ventura Laurent
    L.M.P, Université de Tours, 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France
  • Cayrel Frederic
    L.M.P, Université de Tours, 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France STMicroelectronics, 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France
  • Dubois Christiane
    L.P.M.-INSA Lyon, 20 rue A. Einstein, F-69621 Villeurbanne Cedex, France
  • Jérisian Robert
    L.M.P, Université de Tours, 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France

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In this paper, we shed light on the strong interaction between the cavity layer induced by helium implantation and boron. First, we present the impact of the He gettering step on a boron-diffused profile. In order to study the boron-cavity interaction, we used uniformly boron-doped wafers implanted with a high dose of helium and annealed using conventional furnace annealing as well as rapid thermal annealing. Then, to avoid any precipitation phenomena, conditions were chosen such that the boron solid solubility value was not exceeded. Our experimental results indicate a large trapping of boron within the cavity layer that occurs at the early stage of the annealing. A quantitative study of the gettered dopant fraction has been performed. These results enable us to have a better understanding of this interaction of the He-gettering step with boron atoms, which are of great interest for device applications.

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