Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition.

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  • Li Hongdong
    Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Tsukihara Masashi
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Naoi Yoshiki
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Sakai Shiro
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

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Dislocation defects in a GaN epilayer grown on a low-temperature GaN-rich GaNP (LT-GaNP) buffer on sapphire substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) were investigated by means of transmission electron microscopy and atomic force microscopy. The GaNP-buffer-based high-temperature GaN (HT-GaN) layers have a dislocation density as low as 5× 108 cm-2, which can be compared to the best results for GaN epilayers grown on sapphire by atmospheric pressure MOCVD using the conventional LT-GaN or -AlN buffer. The dislocation density reduction could be predominately attributed to an enhanced lateral overgrowth for the HT-GaN layer grown on a GaNP buffer, which is confirmed by the observation of a special morphology evolution beginning from the GaNP buffer.

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