Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface.
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- Wang Xinqiang
- Center for Frontier Electronics and Photonics, Chiba University
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- Iwaki Hiroyuki
- Department of Electronics and Mechanical Engineering, Chiba University
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- Murakami Masashi
- Department of Electronics and Mechanical Engineering, Chiba University
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- Du Xiaolong
- Center for Frontier Electronics and Photonics, Chiba University
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- Ishitani Yoshihiro
- Department of Electronics and Mechanical Engineering, Chiba University
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- Yoshikawa Akihiko
- Center for Frontier Electronics and Photonics, Chiba University Department of Electronics and Mechanical Engineering, Chiba University
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抄録
Nitridation of a (0001) sapphire substrate was used to eliminate the rotation domains and improve the quality of a ZnO film grown by rf-plasma-assisted molecular beam epitaxy. It was found that a very thin nitrogen polar AlN layer, which was formed by nitridation, acted as a template for the following growth of the ZnO film, resulting in the elimination of the rotation domains which were often observed in the case without nitridation. The full width at half maximum of (002) and (102) X-ray diffraction ω-scans decreased from 912 and 2870 arcsec to 95 and 445 arcsec, respectively, due to the effect of sapphire nitridation. Based on this, its optical quality was also improved.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 42 (2A), L99-L101, 2003
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681233614464
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- NII論文ID
- 80015838068
- 210000055106
- 130004764600
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6442988
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可