GaInNAs/GaAs Multiple-Quantum-Well Grown by Metalorganic Chemical Vapor Deposition Using Nitrogen Carrier Gas.
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- Nishida Tetsuo
- Technology Platform Research Center, Seiko Epson Corporation
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- Takaya Mitsuru
- Technology Platform Research Center, Seiko Epson Corporation
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- Kaneko Takeo
- Technology Platform Research Center, Seiko Epson Corporation
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- Shimoda Tatsuya
- Technology Platform Research Center, Seiko Epson Corporation
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抄録
Using nitrogen as a carrier gas, we have grown a GaInNAs/GaAs three-quantum-well structure by metalorganic chemical vapor deposition (MOCVD). Photoluminescence (PL) intensity of the sample using nitrogen carrier gas was increased by more than one order of magnitude and full-width at half maximum (FWHM) was reduced in comparison with a sample using hydrogen carrier gas at the same PL peak wavelength. Furthermore, the incorporation ratio of nitrogen was increased by using nitrogen carrier gas.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 42 (4A), 1511-1513, 2003
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681233647360
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- NII論文ID
- 130004530516
- 10010799391
- 210000053107
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6507644
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
