Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals.
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- Takahashi Jun
- Advanced Technology Research Laboratories, Nippon Steel Corporation
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- Nakai Katsuhiko
- Advanced Technology Research Laboratories, Nippon Steel Corporation
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- Kawakami Kazuto
- Advanced Technology Research Laboratories, Nippon Steel Corporation
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- Inoue Yoshiharu
- Advanced Technology Research Laboratories, Nippon Steel Corporation
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- Yokota Hideki
- Advanced Technology Research Laboratories, Nippon Steel Corporation
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- Tachikawa Akiyoshi
- Advanced Technology Research Laboratories, Nippon Steel Corporation
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- Ikari Atsushi
- Advanced Technology Research Laboratories, Nippon Steel Corporation
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- Ohashi Wataru
- Advanced Technology Research Laboratories, Nippon Steel Corporation
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抄録
Microvoid defects in nitrogen- and/or carbon-doped Czochralski-grown silicon crystals grown under various growth conditions were investigated by transmission electron microscopy. The morphology and volume of the void defects depended strongly on the nitrogen concentration and the cooling rate. With increasing nitrogen concentration, the shape of the voids changed from {111} octahedron to {111} parallelepiped-plate or -rod via an unfaceted structure. The average volume of the voids decreased exponentially with the increase in nitrogen concentration. On the other hand, multiple voids consisting of octahedral segments, whose average volume is small, were observed in carbon-doped crystals. In nitrogen- and carbon-codoped crystals, multiple voids consisting of plate and rod segments were observed, whose average volume was very small. The thickness of the inner oxide layers of voids was influenced by the cooling rate, and not by nitrogen and carbon. From these results, it was assumed that nitrogen and carbon play different roles in the void formation. The change of void morphology by nitrogen-doping is discussed in terms of anisotropic void growth.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 42 (2A), 363-370, 2003
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681234031872
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- NII論文ID
- 10010795876
- 210000053628
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6450504
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可