Near Band Edge Non-radiative Recombination of Si Single Crystal Investigated by Piezoelectric Photothermal Spectroscopy.
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- Memon Aftab A.
- Department of Electrical and Electronic Engineering, Miyazaki University
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- Fukuyama Atsuhiko
- Department of Materials Science, Miyazaki University
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- Ikari Tetsuo
- Department of Electrical and Electronic Engineering, Miyazaki University
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Piezoelectric photothermal spectroscopy (PPTS) measurements were conducted on p- and n-type silicon, ‹100› orientation samples. We showed that a PPTS signal bearing a lower energy edge around 1.048 eV at room temperature was due to band-to-band transitions with optical mode phonon (0.064 eV) absorption. Similarly, a signal bearing an edge above 1.19 eV, observed at temperature less than 200 K was due to band-to-band transitions involving the phonon emission. The two signals were observed in both p- and n-type samples. These results indicated that very low absorption coefficient in indirect semiconductor can be effectively observed by using the proposed PPTS technique. An additional signal bearing a broad peak around 1.18±0.01 eV at room temperature was also observed for both types of samples. We proposed that the broad-peak signal was due to surface states.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 42 (2A), 358-362, 2003
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681234037504
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- NII論文ID
- 10010795868
- 210000053616
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6450492
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可