書誌事項
- タイトル別名
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- Amorphous Semiconductors and their Application to Electronic Devices
- アモルファス ハンドウタイ ト ソノ オウヨウ
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説明
As amorphous materials are characterized by atomic disorder, amorphous semiconductors have unique electrical and optical properties such as localized states, mobility edges, states in the gap arising from structural defects, variable-range hopping conduction, and optical absorption. The properties of amorphous semiconductors depend on the deposition method and its deposition conditions because amorphous materials are in non-equilibrium state. While deposition methods using neutral radical species are well known, methods using ion species are recently being considered. Since the discovery of hydrogenated amorphous silicon with structural sensitivity, a new and wide field from basic science to applications to large-area electronic devices has been opened. The basic properties, deposition methods and applications of amorphous semiconductors, particularly hydrogenated amorphous silicon are summarized.
収録刊行物
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- CORROSION ENGINEERING
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CORROSION ENGINEERING 39 (7), 375-381, 1990
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詳細情報 詳細情報について
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- CRID
- 1390282681234390272
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- NII論文ID
- 130004732187
- 130006025335
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- NII書誌ID
- AN00225595
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- ISSN
- 18841155
- 00109355
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- NDL書誌ID
- 3678617
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- データソース種別
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- NDL
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