Development of Deep Ultraviolet micro-Raman Spectroscopy-Characterization of nanosurface of semiconductors-

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  • NAKASHIMA Shin-ichi
    Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology AIST Tsukuba central
  • MITANI Takashi
    Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology AIST Tsukuba central
  • OKUMURA Hajime
    Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology AIST Tsukuba central

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Other Title
  • 極紫外顕微ラマン分光法の開発―半導体ナノ表面層の評価―
  • キョク シガイケンビラマン ブンコウホウ ノ カイハツ ハンドウタイ ナノ ヒョウメンソウ ノ ヒョウカ
  • Characterization of nanosurface of semiconductors
  • 半導体ナノ表面層の評価

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Abstract

Recent advance in instrumentations has provided progress in deep ultraviolet (DUV) Raman spectroscopy. This technique has enabled to characterize thin surface layers of wide gap semiconductors, because the penetra-tion depth of the DUV light is very shallow for these materials. We have briefly reviewed present status of the DUV Raman spectroscopy and its application to studies of inorganic and organic materials. Results of the DUV Raman characterization of surfaces and damage in nano-scaled surface layers which is induced by processing for device fabrication are also described.

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