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InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm2/Layer)
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- Shimizu Hitoshi
- Department of Nonlinear Science, ATR Wave Engineering Laboratories
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- Saravanan Shanmugam
- Department of Nonlinear Science, ATR Wave Engineering Laboratories
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- Yoshida Junji
- Department of Nonlinear Science, ATR Wave Engineering Laboratories
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- Ibe Sayoko
- Yokohama R&D Laboratories, Furukawa Electric Co., Ltd.
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- Yokouchi Noriyuki
- Yokohama R&D Laboratories, Furukawa Electric Co., Ltd.
Bibliographic Information
- Other Title
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- InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm<sup>2</sup>/Layer)
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Description
This paper describes the successful stacking of multilayered InAs quantum dots (QD) on a GaAs substrate up to 12 layers. The laser oscillated from the ground state under the condition of mirror loss at less than 7–8 cm−1. The extremely low threshold current density per QD-layer of 7 A/cm2/layer was obtained with a lasing wavelength of 1.21 μm at room temperature, which is the lowest value for any known semiconductor laser.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (33-36), L1103-L1104, 2005
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390282681240268160
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- NII Article ID
- 210000059286
- 130004766218
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- ISSN
- 13474065
- 00214922
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed
