Formation of β-FeSi2-xGex by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]n Multilayered Structure

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  • Formation of .BETA.-FeSi2-xGex by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]n Multilayered Structure
  • Formation of ベータ FeSi2 xGex by Ge Segregation Controlled Solid Phase Growth of a Si a FeSiGe n Multilayered Structure
  • Formation of β-FeSi<sub>2-x</sub>Ge<sub>x</sub> by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]<sub>n</sub> Multilayered Structure

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The solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge0.1]n (n=1, 2, 4; total thickness: 500 nm) multilayered structures has been investigated. After annealing at 700°C, [a-SiGe/polycrystalline β-FeSi2−xGex]n (x=0.5, 0.4, 0.2 for n=1, 2, 4, respectively) multilayered structures were formed. From the analysis of X-ray diffraction spectra, it was found that the lattice constants of β-FeSi1.5Ge0.5 changed from those of relaxed β-FeSi2 by 0.4–0.5%. The change decreased with increasing n, which was due to the segregation of Ge atoms from the a-Fe0.4Si0.5Ge0.1 layers to the a-Si layers becoming larger with increasing n. After annealing at 800°C, Ge atoms were completely swept out from the β-FeSi2−xGex lattice. In addition, the agglomeration of β-FeSi2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si0.7Ge0.3 were formed. This technique for the formation of β-FeSi2−xGex is expected to be useful for energy gap modulation for advanced optoelectrical devices.

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