A Low-Dielectric-Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on an IrO2 Substrate for One-Transistor-Type Ferroelectric Memory Device

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  • Low Dielectric Constant Sr2 Ta1 x Nbx 2O7 Thin Film Controlling the Crystal Orientation on an IrO2 Substrate for One Transistor Type Ferroelectric Memory Device
  • A Low-Dielectric-Constant Sr<sub>2</sub>(Ta<sub>1-x</sub>,Nb<sub>x</sub>)<sub>2</sub>O<sub>7</sub> Thin Film Controlling the Crystal Orientation on an IrO<sub>2</sub> Substrate for One-Transistor-Type Ferroelectric Memory Device

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The compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr2(Ta1−x,Nbx)2O7 (STN) film formation technology, which can be applied to a floating-gate-type ferroelectric random access memory (FFRAM), has been developed. Furthermore, a new technology that controls the orientation and the properties (a low dielectric constant and large coercive field) of STN has been developed. An MFMIS structure device with a large memory bias window (1.3 V) under ±5 V operation and a long retention time (>10 h) has successfully been fabricated.

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