Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor

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  • Photoinduced Efects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor

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Abstract

We have investigated the effect of illumination on the Coulomb blockade (CB) characteristics of Si two-dimensional multidot field-effect transistors. Some of the transistors exhibit remarkable changes in their CB characteristics for single-hole tunneling as a results of illumination, i.e., the generation of a new Coulomb oscillation peak and/or a shift in gate voltage. The photoinduced phenomena can be explained by a model in which the illumination supplies an additional electron to a dot adjacent to the CB current percolation path. A Monte Carlo simulation of an equivalent circuit based on the above model can reproduce the experimental characteristics.

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