Photoinduced Efects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
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- Ikeda Hiroya
- Research Institute of Electronics, Shizuoka University
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- Nuryadi Ratno
- Research Institute of Electronics, Shizuoka University
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- Ishikawa Yasuhiko
- Research Institute of Electronics, Shizuoka University
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- Tabe Michiharu
- Research Institute of Electronics, Shizuoka University
書誌事項
- タイトル別名
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- Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
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説明
We have investigated the effect of illumination on the Coulomb blockade (CB) characteristics of Si two-dimensional multidot field-effect transistors. Some of the transistors exhibit remarkable changes in their CB characteristics for single-hole tunneling as a results of illumination, i.e., the generation of a new Coulomb oscillation peak and/or a shift in gate voltage. The photoinduced phenomena can be explained by a model in which the illumination supplies an additional electron to a dot adjacent to the CB current percolation path. A Monte Carlo simulation of an equivalent circuit based on the above model can reproduce the experimental characteristics.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (6B), L759-L761, 2004
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681240596736
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- NII論文ID
- 10013161190
- 210000057312
- 130004532290
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- NII書誌ID
- AA11906093
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6971626
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
