Numerical Study on Shape Transformation of Silicon Trenches by High-Temperature Hydrogen Annealing
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- Sudoh Koichi
- The Institute of Scientific and Industrial Research, Osaka University
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- Iwasaki Hiroshi
- The Institute of Scientific and Industrial Research, Osaka University
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- Kuribayashi Hitoshi
- Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd.
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- Hiruta Reiko
- Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd.
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- Shimizu Ryosuke
- Device Technology Laboratory, Fuji Electric Advanced Technology Co., Ltd.
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抄録
We have studied shape transformation of micron-sized trenches on Si substrates during high temperature hydrogen annealing, performing numerical simulations based on Mullins’ theory. We have considered evaporation-condensation and surface diffusion as mass transport mechanisms causing shape transformation. The simulation allowing only surface diffusion reproduces well the observed micron-scale aspects of shape transformation by hydrogen annealing at 1000–1150°C.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (9A), 5937-5941, 2004
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681240673024
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- NII論文ID
- 210000056281
- 10013573074
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 7079003
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
