InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

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  • Kikuchi Akihiko
    Department of Electrical and Electronics Engineering, Sophia University
  • Kawai Mizue
    Department of Electrical and Electronics Engineering, Sophia University
  • Tada Makoto
    Department of Electrical and Electronics Engineering, Sophia University
  • Kishino Katsumi
    Department of Electrical and Electronics Engineering, Sophia University

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Description

GaN-nanocolumn-based InGaN/GaN multiple quantum disk (MQD) light-emitting diodes (LEDs) with a novel columnar structure were fabricated on n-type (111) Si substrates. The n-GaN and InGaN/GaN MQD active region had isolated columnar structures, while the diameters were gradually increased in the p-GaN region by controlling the growth conditions. Consequently, the nanocolumn LED had a continuous surface without chasms. This novel structure enables p-type electrodes to be fabricated by the conventional method on top of nanocolumn devices while keeping the superior optical properties of the isolated nanocolumn active region. The nanocolumn LED showed clear rectifying behavior with a typical turn-on voltage of 2.5–3.0 V at room temperature. Electroluminescence was observed through semitransparent electrodes with various emission colors from green (530 nm) to red (645 nm).

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