Subgap Optical Absorption Studies in Boron Implanted Silicon

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Abstract

Effect of light ion implantation in Si is studied using B+ ion implantation. The subgap optical absorption measurement by photothermal deflection spectroscopy (PDS) is used for the investigations. The subgap absorption is measured as a function of ion dose and substrate temperature. The magnitude of optical absorption, divacancy concentration and inverse logarithmic slope E0 obtained from absorption measurements are used for analyzing the results. It is found that the 300 K implanted samples do not undergo amorphization even at a dose of 1×1016 cm−2. In the case of 80 K implanted sample, amorphization occurs at a dose of ≈1015 cm−2. The dose and temperature dependence of the above parameters and their annealing induced changes are discussed in terms of the nature and evolution of defects in the case of a light ion like B+ implantation in Si.

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