Microstructure and Microwave Dielectric Properties of (1-x)Ba(Co1/3Nb2/3)O3-xBa(Zn1/3Nb2/3)O3 Ceramics

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  • Ahn Cheol-Woo
    Department of Materials Science and Engineering, Korea University
  • Nahm Sahn
    Department of Materials Science and Engineering, Korea University
  • Yoon Seok-Jin
    Thin Film Technology Research Center, Korea Institute of Science and Technology
  • Park Hyun-Min
    New Materials Evaluation Center, Korea Research Institute of Standards and Science
  • Lee Hwack-Joo
    New Materials Evaluation Center, Korea Research Institute of Standards and Science

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  • Microstructure and Microwave Dielectric Properties of (1-<i>x</i>)Ba(Co<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>–<i>x</i>Ba(Zn<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>Ceramics

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The microstructure and microwave dielectric properties of (1−x)Ba(Co1⁄3Nb2⁄3)O3–xBa(Zn1⁄3Nb2⁄3)O3 [(1−x)BCN–xBZN] ceramics with 0.0≤x≤1.0 were investigated. When the sintering temperature was 1400°C, a homogeneous phase with a 1:2 ordered structure was found in the specimens with x≤0.3 but for the specimens with x≥0.6, a disordered structure and BaNb6O16 second phase were found. The grain growth related to the BaNb6O16 second phase occurred in the specimens with x≥0.5. The temperature coefficient of the resonant frequency (τf) increased with increasing x, and the specimens with 0.3≤x≤0.4 have zero τf. Dielectric constant (εr) increased with the increase in x and was about 34.5 when x=0.3. For the specimens with x≤0.3, the Q×f value was high but decreased as x exceeded 0.3. The maximum Q×f value, 97,000 GHz, was obtained for 0.7BCN–0.3BZN ceramics sintered at 1400°C for 20 h.

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