Vacancy-Oxygen Pairs and Vacancy-Oxygen-Hydrogen Complexes in Electron-Irradiated n-type Cz-Si Pre-Doped with Hydrogen

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We studied complexes of vacancies and impurities (oxygen and hydrogen) in electron-irradiated n-type Cz-Si pre-doped with hydrogen (H) and compared the results with those for high-resistivity Cz-Si specimens. Specimens were prepared from an n-type Cz-Si crystal. They were irradiated with 3-MeV electrons at room temperature after hydrogen doping. Their optical absorption spectra were measured at 7 K. The concentration of the VO pair in n-type specimens was higher than that in high-resistivity specimens. Due to isochronal annealing, VO0 decreased in two stages, 75–200 and 200–400°C. In the first stage, H2 moved to VO pairs and formed VOH2 complexes. In the second stage, we concluded that VOH2 complexes moved to VO pairs, which is reverse of our previous conclusion that VO pairs moved to VOH2 complexes. We reached the above conclusion by comparing this stage with that of a hydrogen non-doped specimen. We determined calibration factors of VO0, VO− and VOH2 at 7 K to be 1.8×1016, 3.5×1016 and 2.3×1016 cm−2, respectively, which convert optical absorption intensities into concentrations.

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