Crystal Growth of Pb(In<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub>and Pb(Sc<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub>Piezoelectric Single Crystals Using the Solution Bridgman Method
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- Hosono Yasuharu
- Advanced Discrete Semiconductor Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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- Yamashita Yohachi
- Advanced Discrete Semiconductor Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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- Sakamoto Hideya
- School of Science and Engineering, Waseda University
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- Ichinose Noboru
- School of Science and Engineering, Waseda University
書誌事項
- タイトル別名
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- Crystal Growth of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 and Pb(Sc1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 Piezoelectric Single Crystals Using the Solution Bridgman Method
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説明
The crystal growth of xPb(In1⁄2Nb1⁄2)O3-yPb(Mg1⁄3Nb2⁄3)-zPbTiO3 (PIMNT 100x⁄100y⁄100z) and x′Pb(Sc1⁄2Nb1⁄2)O3-y′Pb(Mg1⁄3Nb2⁄3)-z′PbTiO3 (PSMNT 100x′⁄100y′⁄100z′) ternary systems was investigated by the solution Bridgman method using PbO-B2O3 flux. A PIMNT single crystal 25 mm in diameter and 30 mm in length was grown at the bottom of a platinum crucible; the highest temperature was 1250°C and the growth rate was 0.4 mm/h. On the other hand, the PSMNT single crystals were multi nucleated under the same growth conditions. The results obtained using an electron probe microanalyzer (EPMA) revealed that Ti content increased gradually from the crystal part near the bottom of the crucible for the PIMNT and PSMNT single crystals. Although the In/Mg ratio was relatively constant in the PIMNT, the Sc/Mg ratio varied considerably in the PSMNT crystals. The Curie temperature, Tc, of the PIMNT single crystal ranged from 181°C to 196°C. The dielectric constant after poling, ε33T⁄ε0=3,630, coercive field of Ec=7.0 kV/cm, electromechanical coupling factors sliver mode, k′33=80.3%, and frequency constant, N′33r=1,110 Hz·m, were confirmed for the PIMNT single crystal with Tc=191°C.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 42 (9B), 6062-6067, 2003
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681241498496
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- NII論文ID
- 130004531242
- 10011767592
- 210000054212
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6705967
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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