DNA Analysis Chip Based on Field-Effect Transistors

Sakata Toshiya, Kamahori Masao, Miyahara Yuji

doi:10.1143/jjap.44.2854

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Description

We have been developing a genetic field-effect transistor (FET) based on the potentiometric detection of hybridization and intercalation on the Si₃N₄ gate insulator. In this study, we demonstrated the detection of charge density change as a result of hybridization and intercalation using genetic FETs. Since the electrical output signal is obtained with the genetic FET without any labeling reagent, as compared with the conventional fluorescence-based DNA chips, the genetic FET platform is suitable for a simple and inexpensive system for genetic analysis in clinical diagnostics.

Journal

Japanese Journal of Applied Physics

Japanese Journal of Applied Physics 44 (4B), 2854-2859, 2005

The Japan Society of Applied Physics

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Details 詳細情報について

CRID: 1390282681241640192

NII Article ID: 210000057850; 10015705877; 130004533778

NII Book ID: AA10457675

DOI: 10.1143/jjap.44.2854

ISSN: 13474065; 00214922; http://id.crossref.org/issn/13474065

NDL BIB ID: 7307043

Web Site: http://id.ndl.go.jp/bib/7307043; https://ndlsearch.ndl.go.jp/books/R000000004-I7307043; https://iopscience.iop.org/article/10.1143/JJAP.44.2854; https://iopscience.iop.org/article/10.1143/JJAP.44.2854/pdf

Text Lang: en

Article Type: journal article

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