Mechanism of Nonalloyed Al Ohmic Contacts to n-Type ZnO:Al Epitaxial Layer

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  • Kim Han-Ki
    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST) Department of Electrical and Computer Engineering and Micro and Nanotechnology Laboratory, University of Illinois
  • Seong Tae-Yeon
    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST)
  • Kim Koung-Kook
    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST)
  • Park Seoug-Ju
    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST)
  • Yoon Young Soo
    Nano-Materials Research Center& Micro Cell Lab, Korea Institute of Science and Technology (KIST)
  • Adesida Ilesanmi
    Department of Electrical and Computer Engineering and Micro and Nanotechnology Laboratory, University of Illinois

書誌事項

公開日
2004
DOI
  • 10.1143/jjap.43.976
公開者
The Japan Society of Applied Physics

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説明

The mechanism of Al ohmic contacts to n-type zinc oxide (ZnO:Al) epitaxial layer was investigated. The formation of an Al-ZnO interfacial phase at room temperature was responsible for the low specific resistivity (8±0.3×10−4 Ωcm2). The results of Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) depth profiles, and glancing angle X-ray diffraction (GXRD) indicate that an interfacial reaction between Al and ZnO results in an increased doping concentration in the region of the ZnO surface resulting in a low specific contact resistivity without the need for a thermal annealing process.

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