Isotope Effects on H and D Coadsorptions on Si Surfaces

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  • Rahman Faridur
    Department of Electrical Engineering, Kyushu Institute of Technology
  • Ohnishi Nobuyuki
    Department of Electrical Engineering, Kyushu Institute of Technology
  • Khanom Fouzia
    Department of Electrical Engineering, Kyushu Institute of Technology
  • Inanaga Shoji
    Department of Electrical Engineering, Kyushu Institute of Technology
  • Namiki Akira
    Department of Electrical Engineering, Kyushu Institute of Technology

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We studied isotope effects on D and H coadsorptions on the Si(100) and Si(111) surfaces, employing an atomic beam method combined with a desorption measurement technique. We evaluated D:H ratios to be approximately 6:4 for both the Si(100) and Si(111) surfaces exposed to the atomic H/D beam mixed with equal amounts of H and D atoms. This observed isotope effect was interpreted in terms of mass-dependent abstraction of surface adatoms by incident atoms. The observed D:H ratios could be well reproduced by the simulation based on the previously reported isotope effect on D(H) abstraction by H atoms.

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