Heteroepitaxial Growth and Ferroelectricity of Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub>Films on n-GaN/Al<sub>2</sub>O<sub>3</sub>(0001) Substrates Prepared by Pulsed-Laser Deposition
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- Cho Chae-Ryong
- Busan branch, Korea Basic Science Institute
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- Hwang Jae-Yeol
- Busan branch, Korea Basic Science Institute
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- Kim Jong-Pil
- Busan branch, Korea Basic Science Institute
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- Jeong Se-Young
- Department of Nano-science and Technology, Pusan National University
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- Park Bae Ho
- Department of Physics, Konkuk University
書誌事項
- タイトル別名
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- Heteroepitaxial Growth and Ferroelectricity of Bi3.25La0.75Ti3O12 Films on n-GaN/Al2O3(0001) Substrates Prepared by Pulsed-Laser Deposition
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説明
Heteroepitaxial Bi3.25La0.75Ti3O12 (BLT) films were grown by pulsed-laser deposition on n-GaN/Al2O3(0001) substrates. X-ray θ–2θ, rocking curve measurements and φ-scans revealed the degree of crystallinity and epitaxiality. The full width at half maximum for (028) BLT deposited on GaN was 0.93° due to multi-orientational states. Surface chemical bonding states of as-deposited and etched films were recorded by X-ray photoelectron spectroscopy. The remanent polarization and coercive field of the Au/BLT/n–GaN/Al2O3(0001) structure were 22 μC/cm2 and 150 kV/cm, respectively.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (11A), 7625-7626, 2004
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681241988224
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- NII論文ID
- 10014030562
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可