Crystal Orientation Dependence on Electrical Properties of Pb(Zr,Ti)O<sub>3</sub> Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition
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- Okamoto Shoji
- Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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- Yokoyama Shintaro
- Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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- Honda Yoshihisa
- Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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- Asano Gouji
- Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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- Funakubo Hiroshi
- Department of Innovative and Engineered Materials, Tokyo Institute of Technology
書誌事項
- タイトル別名
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- Crystal Orientation Dependence on Electrical Properties of Pb(Zr,Ti)O3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition
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説明
(111)c- and (100)c-oriented SrRuO3 films were successfully grown on (111)Pt/TiO2/SiO2/(100)Si and (100)LaNiO3/(111)Pt/TiO2/SiO2/(100)Si substrates, respectively, by RF-magnetron sputtering method. On these (111)c- and (100)c-oriented SuRuO3 films, (111)- and (001)/(100)-oriented fiber-textured Pb(Zr0.35Ti0.65)O3 films with 2.0 μm in thickness were grown by metalorganic chemical vapor deposition (MOCVD). Well-saturated polarization-electric field (P-E) hysteresis loops were observed for both films. The remanent polarization (Pr) values of (111)- and (001)/(100)-oriented 2.0 μm-thick Pb(Zr,Ti)O3 (PZT) films were almost the same at approximately 45 μC/cm2 at 200 kV/cm, while the coercive field (Ec) values of these films were slight different at 61 kV/cm and 71 kV/cm, respectively. Moreover, the field-induced strains measured by scanning probe microscopy were also almost the same at approximately 0.2% up to 100 kV/cm. These data show the crystal orientation independence of the remanent polarization and field-induced strain of Pb(Zr0.35Ti0.65)O3 films.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (9B), 6567-6570, 2004
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681242023552
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- NII論文ID
- 210000056427
- 10013611860
- 130004532913
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
- https://id.crossref.org/issn/13474065
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- NDL書誌ID
- 7106518
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDLサーチ
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- CiNii Articles
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- 抄録ライセンスフラグ
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