Micropatterning of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Ferroelectric Thin Films Using a Selective Deposition Technique Combined with Patterned Self-Assembled Monolayers and Liquid-Source Misted Chemical Deposition

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  • Micropatterning of SrBi2Ta2O9 Ferroelectric Thin Films Using a Selective Deposition Technique Combined with Patterned Self-Assembled Monolayers and Liquid-Source Misted Chemical Deposition

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We demonstrated a novel patterning method using a selective deposition technique of ferroelectric thin films without etching. Self-assembled monolayers (SAMs) of 1H,1H,2H,2H-perfluorodecyltriethoxysilane [CF3(CF2)7CH2CH2Si(OC2H5)3; FAS] were patterned on Pt/SiO2/Si substrates. The patterned SAMs on these surfaces defined the selective area on which the liquid-source misted chemical deposition (LSMCD) of SrBi2Ta2O9 (SBT) was performed. Pt top electrodes were then sputter-deposited on the patterned SBT films by the liftoff method. The remanent polarization (Pr) of the obtained SBT films was 7.5 μC/cm2 with good squareness of the hysteresis loops for 50μm×50μm square capacitors. By this method, we succeeded in fabricating uniform lines of ferroelectric thin films of 0.5 μm width. These results show that a selective deposition technique is promising for realizing high-density ferroelectric random access memories (FeRAMs).

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