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- Nakagawa Yoshinori
- The University of Tokushima, Faculty of Engineering, Optical Science and Technology Department
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- Haraguchi Masanobu
- The University of Tokushima, Faculty of Engineering, Optical Science and Technology Department
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- Fukui Masuo
- The University of Tokushima, Faculty of Engineering, Optical Science and Technology Department
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- Tanaka Shinji
- Nichia Corporation
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- Sakaki Atsushi
- Nichia Corporation
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- Kususe Ken
- Nichia Corporation
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- Hosokawa Naoki
- Nichia Corporation
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- Takehara Takae
- Nichia Corporation
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- Morioka Yasushi
- Nichia Corporation
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- Iijima Hiroshi
- Nichia Corporation
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- Kubota Masaru
- Nichia Corporation
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- Abe Masatoshi
- Nichia Corporation
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- Mukai Takashi
- Nichia Corporation
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- Takagi Hironori
- Nichia Corporation
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- Shinomiya Gen-ichi
- Nichia Corporation
この論文をさがす
説明
We have investigated the thermal activation process of Mg dopant in Mg-doped GaN by secondary ion mass spectrometry (SIMS) and Hall measurement with the van der Pauw configuration. We have found a systematic relationship between the amount of the hydrogen dissociated from the Mg-doped GaN layer by thermal annealing and the electronic conductive properties of the layer, i.e., Hall mobility, Hall carrier density and resistivity of the layer. The hydrogen in the Mg-doped GaN layer has been classified into at least two different modes. The first mode involves relatively larger activation energy of the dissociation process from the Mg-doped GaN layer, and the dissociation energy from the Mg-doped GaN to the atmosphere is 0.8–1.5 eV. The second mode has the dissociation energy of 0.2–0.5 eV. The former mode may be associate with the hydrogen passivation of the Mg dopant in GaN and the latter one may be closely related to the passivation of the electrical compensation mechanism for the positive hole carriers in the Mg-doped GaN.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (1), 23-29, 2004
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681242332160
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- NII論文ID
- 10011948458
- 210000055421
- 130004531405
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 6832366
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可