Contact-Hole Etching with NH<sub>3</sub>-Added C<sub>5</sub>F<sub>8</sub> Pulse-Modulated Plasma

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  • Ooka Masahiro
    Research Center for Nanodevices and Systems, Hiroshima University
  • Yokoyama Shin
    Research Center for Nanodevices and Systems, Hiroshima University

書誌事項

タイトル別名
  • Contact-Hole Etching with NH3-Added C5F8 Pulse-Modulated Plasma
公開日
2005
DOI
  • 10.1143/jjap.44.6476
公開者
The Japan Society of Applied Physics

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説明

For plasma etching, an alternative perfluorocarbon (PFC) gas is necessary in order to minimize the effect on global warming. Etching contact holes of sub-0.1-μm size in SiO2 is studied using an etching gas with a small greenhouse effect, cyclic (c-) C5F8 containing various other gases (O2, H2 and NH3). Adding NH3 to pulse-modulated plasma is quite effective for improving the etching characteristics compared with adding O2 or H2. Adding NH3 improves both the hole profile and etching selectivity. The influence of the added NH3 gas was analyzed by optical emission spectroscopy (OES), and the correlation between the flow rate of NH3, the OES results, and the SiO2 etching rate was studied.

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