Cross-Sectional Analysis of CuInS<sub>2</sub>Thin Film Prepared from Electroplated Precursor

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  • Onuma Yoshio
    Core Technology Research Laboratory, Shinko Electric Industries Co., Ltd. Faculty of Engineering, Shinshu University
  • Takeuchi Kenji
    Core Technology Research Laboratory, Shinko Electric Industries Co., Ltd.
  • Ichikawa Sumihiro
    Core Technology Research Laboratory, Shinko Electric Industries Co., Ltd.
  • Suzuki Yasunari
    Core Technology Research Laboratory, Shinko Electric Industries Co., Ltd.
  • Fukasawa Ryo
    Core Technology Research Laboratory, Shinko Electric Industries Co., Ltd.
  • Matono Daisuke
    Core Technology Research Laboratory, Shinko Electric Industries Co., Ltd.
  • Nakamura Kenji
    Core Technology Research Laboratory, Shinko Electric Industries Co., Ltd.
  • Nakazawa Masao
    Core Technology Research Laboratory, Shinko Electric Industries Co., Ltd.
  • Takei Koji
    Core Technology Research Laboratory, Shinko Electric Industries Co., Ltd.
  • Hashimoto Yoshio
    Faculty of Engineering, Shinshu University
  • Ito Kentaro
    Faculty of Engineering, Shinshu University

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  • Cross-Sectional Analysis of CuInS2 Thin Film Prepared from Electroplated Precursor

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説明

Thin CuInS2 films were prepared by sulfurization of Cu/In bi-layers. The precursor layer was firstly electroplated onto the treated surface of Mo-coated glass. The observation of the cross- section prepared by focused ion beam (FIB) etching revealed that the void-free film was initially formed on the top surface of the precursor and subsequently continued to grow until the advancing front of the film reached the Mo layer. Then followed the nucleation of voids near the bottom of the CuInS2 film. Prolonged sulfurization caused the voids to increase in size. Thin film solar cells were fabricated using the CuInS2 film as an optical absorber layer. It was found that the optimization of a sulfurization period is important in order to improve the cell efficiency.

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