Low-Temperature Formation of Poly-Si<sub>1-x</sub>Ge<sub>x</sub> (x: 0–1) on SiO<sub>2</sub> by Au-Mediated Lateral Crystallization

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  • Low-Temperature Formation of Poly-Si1-xGex (x:0-1) on SiO2 by Au-Mediated Lateral Crystallization

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The Au-mediated low-temperature (400°C) crystallization of amorphous-Si1−xGex (x: 0–1) on SiO2 has been investigated. A growth velocity exceeding 20 μm/h was obtained for samples in the entire range of Ge fractions (x: 0–1), although it decreased with increasing Ge fraction. These values are much higher than those obtained by conventional Ni-mediated crystallization. As a result, strain-free poly-Si1−xGex (x: 0–1) with large areas (>20 μm) were obtained at a low temperature (400°C). This newly developed method has a high potential for fabricating poly-Si1−xGex (x: 0–1) on a glass substrate.

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