A Low Threshold Current Density InAs/AlGaSb Superlattice Quantum Cascade Laser Operating at 14 µm

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  • Ohtani Keita
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University PRESTO, Japan Science and Technology Agency
  • Fujita Kazuue
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
  • Ohno Hideo
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University

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  • A Low Threshold Current Density InAs/AlGaSb Superlattice Quantum Cascade Laser Operating at 14 .MU.m

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We report a low threshold current density InAs/AlGaSb superlattice quantum cascade laser operating at 14 μm. In order to reduce the threshold current density, InAs/AlGaSb superlattice structures providing large oscillator strength and fast carrier depopulation are used for the active layers. Observed threshold current density at 80 K is 0.92 kA/cm2, which is about 5 times lower than that of the first InAs/AlSb quantum cascade laser reported earlier. This is among lowest threshold current density of quantum cascade lasers operating in the mid-infrared spectrum region.

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