Single-Crystal Field-Effect Transistors Based on Organic Selenium-Containing Semiconductor
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- Zeis Roswitha
- Bell Laboratories, Lucent Technologies
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- Kloc Christian
- Bell Laboratories, Lucent Technologies
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- Takimiya Kazuo
- Graduate School of Engineering, Hiroshima University
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- Kunugi Yoshihito
- Faculty of Integrated Arts and Sciences, Hiroshima University
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- Konda Yasushi
- Graduate School of Engineering, Hiroshima University
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- Niihara Naoto
- Graduate School of Engineering, Hiroshima University
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- Otsubo Tetsuo
- Graduate School of Engineering, Hiroshima University
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説明
We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than −7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm2/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (6A), 3712-3714, 2005
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681243333120
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- NII論文ID
- 10016440658
- 210000058057
- 130004534075
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 7337119
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- 本文言語コード
- en
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- データソース種別
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- NDLサーチ
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