Electronic Structure of Ordered Ga<sub>0.5</sub>In<sub>0.5</sub>P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements

DOI Web Site Web Site Web Site 参考文献21件
  • Yamashita Kenichi
    Department of Electronics and Information Science, Kyoto Institute of Technology
  • Oe Kunishige
    Department of Electronics and Information Science, Kyoto Institute of Technology
  • Kita Takashi
    Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University
  • Wada Osamu
    Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University
  • Wang Yong
    Department of Physics, Graduate School of Science, Osaka University
  • Geng Christian
    Physikalisches Institut, Universität Stuttgart
  • Scholz Ferdinand
    Physikalisches Institut, Universität Stuttgart
  • Schweizer Heinz
    Physikalisches Institut, Universität Stuttgart

書誌事項

タイトル別名
  • Electronic Structure of Ordered Ga0.5In0.5P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements

この論文をさがす

抄録

We have investigated the electronic band structure of a long-range-ordered Ga0.5In0.5P/GaAs heterointerface by optical measurements and a semi-empirical calculation. Raman-scattering spectra of the ordered Ga0.5In0.5P/GaAs samples show plasmon–phonon coupled modes induced by dense electron accumulation at the heterointerface, in contrast to that of the unordered sample which shows the spectrum of bulk GaAs. Furthermore, the Franz–Keldysh oscillation observed in the photoluminescence-excitation spectrum indicates a strong interface electric field. According to the results of a comparison between the experiment and a semi-empirical calculation based on Poisson’s law, it is found that the spatial distribution of the accumulated electron density is modified strongly by the conduction-band discontinuity and the interface field, depending on the order parameter.

収録刊行物

参考文献 (21)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ