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- Asif Khan M.
- Department of Electrical Engineering, University of South Carolina
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- Shatalov M.
- Department of Electrical Engineering, University of South Carolina
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- Maruska H. P.
- Department of Electrical Engineering, University of South Carolina
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- Wang H. M.
- Department of Electrical Engineering, University of South Carolina
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- Kuokstis E.
- Department of Electrical Engineering, University of South Carolina
書誌事項
- タイトル別名
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- III-Nitride UV Devices
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抄録
The need for efficient, compact and robust solid-state UV optical sources and sensors had stimulated the development of optical devices based on III–nitride material system. Rapid progress in material growth, device fabrication and packaging enabled demonstration of high efficiency visible-blind and solar-blind photodetectors, deep-UV light-emitting diodes with emission from 400 to 250 nm, and UV laser diodes with operation wavelengths ranging from 340 to 350 nm. Applications of these UV optical devices include flame sensing; fluorescence-based biochemical sensing; covert communications; air, water and food purification and disinfection; and biomedical instrumentation. This paper provides a review of recent advances in the development of UV optical devices. Performance of state-of-the-art devices as well as future prospects and challenges are discussed.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (10), 7191-7206, 2005
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681243509760
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- NII論文ID
- 130004765978
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- NII書誌ID
- AA10457675
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- COI
- 1:CAS:528:DC%2BD2MXhtFOrtrrM
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 7478009
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可