Simulation of Band Diagram for Chemical-Vapor-Deposition Diamond Surface Conductivity
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- Kono Shozo
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- Koide Yasuo
- National Institute of Materials Science
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One-dimensional energy band simulation has been performed in order to understand chemical-vapor-deposition (CVD) diamond surface conductivity. It was found that the presence of shallow-level acceptors in the subsurface region and defect states at the surface causes a steep rise in the valence band toward the Fermi level, which causes accumulation of holes in the valence band in the subsurface and near-surface regions. An artificial negative charge accumulation (NCA) layer is introduced in the simulation to examine the effect of possible negatively charged adsorbates on surface conductivity. By adjusting the thickness of NCA layers, we have reproduced quantitatively both the surface conductivity change and Fermi-level change found in previous experiments [Kono et al.: Diamond Relat. Mater. 14 (2005) 459; Riedel et al.: ibid. 13 (2004) 746].
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (12), 8378-8382, 2005
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681244405120
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- NII論文ID
- 10016958545
- 210000059141
- 130004532938
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 7747514
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 使用不可