Dielectric Properties and DC Conductivity of Vacuum-Deposited SiO Films

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  • Hirose Hidenori
    Department of Applied Physics, Faculty of Engineering, University of Tokyo
  • Wada Yasaku
    Department of Applied Physics, Faculty of Engineering, University of Tokyo

書誌事項

公開日
1964
DOI
  • 10.1143/jjap.3.179
公開者
The Japan Society of Applied Physics

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説明

Dielectric properties from 10−2 to 107 c/s and dc conductivity are investigated for vacuum-deposited SiO films. The conductivity decreases with increasing oxidation and the activation energy is estimated to be 8.6 kcal/mole. Two dielectric dispersions are found, the loss peaks of which are at 10−1 c/s (1f dispersion) and at above 107 c/s (hf dispersion), respectively. The strength of 1f dispersion decreases with increasing oxidation and metallic impurities have no appreciable effect on the dispersion. The activation energy of 1f dispersion is almost equal to that to dc conduction. The dc conduction and 1f dispersion are concluded to be attributed to diffusion of free Si ions. The hf dispersion is ascribed to local torsional vibration of SiO chains. A model of the molecular structure of SiO in the glassy state is suggested, which is well consistent with the electrical and optical properties of this material.

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