Mapping Contact Potential Differences with Noncontact Atomic Force Microscope Using Resonance Frequency Shift versus Sample Bias Voltage Curves
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- Kitamura Shin’ichi
- JEOL Ltd. Graduate School of Electronic Science and Technology, Shizuoka University
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- Yonei Kazunori
- JEOL Ltd.
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- Iwatsuki Masashi
- JEOL Ltd.
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- Mooney C. B.
- Analytical Instrumentation Facility, NC State University
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- Fukuda Yasuo
- Graduate School of Electronic Science and Technology, Shizuoka University
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説明
We have measured cantilever resonance frequency versus sample bias voltage and generated frequency vs bias (f–V) curves using an ultrahigh-vacuum noncontact atomic force microscope (UHV NC-AFM). Using the f–V data, we calculated the contact potential difference (CPD) between the tip and the sample. These CPD measurements were compared with those that were directly observed with a scanning Kelvin probe force microscope (SKPM) on the same atomically resolved area of the sample using a UHV-AFM. The CPD values obtained by both methods were similar, however, it was difficult to obtain CPD values that agreed precisely on the atomic scale.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (11), 8113-8115, 2005
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681246128000
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- NII論文ID
- 10016871737
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 7702576
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可