Organometallic VPE Growth of InAs<sub>1-x-y</sub>Sb<sub>x</sub>P<sub>y</sub> on InAs

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  • Fukui Takashi
    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
  • Horikoshi Yoshiji
    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

書誌事項

タイトル別名
  • Organometallic VPE Growth of InAs<SUB>1−<I>x</I>−<I>y</I></SUB>Sb<I><SUB>x</SUB></I>P<I><SUB>y</SUB></I> on InAs
公開日
1981
DOI
  • 10.1143/jjap.20.587
公開者
The Japan Society of Applied Physics

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説明

InAs1−x−ySbxPy quaternary alloy lattice matched to InAs was successfully grown by organometallic vapor phase epitaxial growth. In a fairly wide composition range (0≤x+y≤0.7) the grown quaternary layer exhibited a mirror-smooth surface and a sharp X-ray diffraction spectrum. Full widths of half-maximum of X-ray rocking curve were 20–30″. The growth rate is limited by the mass transport of indium. The miscibility gap extent was found in the low arsenic composition region (x+y>0.7). The band gap energy of the quaternary layer lattice matched to InAs was obtained from photoresponse measurements. The bowing parameter for the band gap energy of the InSbxP1−x mixed crystal system is estimated to be 1.6±0.3 eV.

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