Temperature Dependence of the Band-Edge Effective Mass in n-InAs Deduced from Magnetophonon Resonance
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- Takayama Junji
- Department of Electronics, Faculty of Engineering, Osaka University
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- Shimomae Koichi
- Department of Electronics, Faculty of Engineering, Osaka University
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- Hamaguchi Chihiro
- Department of Electronics, Faculty of Engineering, Osaka University
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説明
Magnetophonon measurements have been carried out in bulk n-InAs using magnetic field modulation technique to obtain the temperature dependence of the band edge effective mass. Resonance extrema for N=2, 3 and 4 were observed in the transverse magnetoresistance in the temperature range from 150 to 250 K and the effective masses were deduced taking into account the conduction band non-parabolicity and the polaron effect. The masses are 0.0231±0.005 m at 150 K and 0.0219±0.005 m at 250 K. The observed temperature dependence of the mass is discussed using Kane’s formula for the nonparabolic conduction band and the momentum matrix element is determined to be P2=19–21 in units of eV.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 20 (7), 1265-1269, 1981
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681248591616
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- NII論文ID
- 110003982060
- 210000020992
- 130003463641
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- NII書誌ID
- AA00690800
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- COI
- 1:CAS:528:DyaL3MXltVKqsrs%3D
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- ISSN
- 13474065
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- JaLC
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- 抄録ライセンスフラグ
- 使用不可