Enhanced Electroluminescence of Polymer Light-Emitting Diodes with Direct Polyaniline Synthesized Anodes.
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- Chen Chii-Chang
- Department of Physics, National Central University
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- Hwang S.R.
- Department of Physics, National Central University
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- Li Wen-Hsien
- Department of Physics, National Central University
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- Lee Kuan-Ching
- Department of Physics, National Central University
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- Chi Gou-Chung
- Department of Physics, National Central University
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- Hsiao Hsia-Tsai
- Department of Chemistry, National Central University
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- Wu Chun-Guey
- Department of Chemistry, National Central University
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説明
We report the current-voltage and the electroluminescence characteristics of the light-emitting diodes based on poly [2-methoxy-5-(2’-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) with indium-tin oxide (ITO) anodes and the diodes in which a layer of polyaniline (PANI) is synthesized directly on a layer of self-assembled monolayers formed by N-phenylaminopropyltrimethoxysilane above the ITO. The results show that the PANI layer reduces Schottky energy barrier and enhances the electroluminescence intensity. We believe that the insertion of the PANI layer causes dipole layers established on the surface resulting in the reduction of the energy barrier. The PANI layer also affects the electron-hole transition probability of the active layer enhancing the brightness of the devices dramatically.
収録刊行物
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- Polymer Journal
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Polymer Journal 34 (4), 271-274, 2002
The Society of Polymer Science, Japan
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詳細情報 詳細情報について
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- CRID
- 1390282681265950592
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- NII論文ID
- 130004430407
- 10012291351
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- NII書誌ID
- AA00777013
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- COI
- 1:CAS:528:DC%2BD38XjsFWqu74%3D
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- ISSN
- 13490540
- 00323896
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- NDL書誌ID
- 6154769
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可