-
- Masumoto Hiroshi
- Institute for Materials Research, Tohoku University
-
- Goto Takashi
- Institute for Materials Research, Tohoku University
-
- Masuda Yoichiro
- Hachinohe Institute of Technology
-
- Baba Akira
- Hachinohe Institute of Technology
-
- Hirai Toshio
- Institute for Materials Research, Tohoku University
Bibliographic Information
- Other Title
-
- ECRプラズマスパッタリング法によるチタン酸ビスマス膜の作製と光学特性
- ECR プラズマ スパッタリングホウ ニ ヨル チタンサン ビスマス マク ノ
Search this article
Abstract
Bi-Ti-O oxide thin films were prepared on a sapphire single crystal substrate by electron cyclotron resonance (ECR) plasma sputtering. The target used was a sintered Bi4Ti3O12(BIT). The temperature of substrate (Tsub) was controlled in the range from room temperature to 640°C. The film obtained at Tsub=500°C was mixture of pyrochlore type oxide(Bi2Ti2O7) and Bi4Ti3O12 oxide. In the film formed at 640°C, the (001) plane of the Bi4Ti3O12 grew parallel to the (1120) and (1102) planes of the sapphire substrate, and the (104) plane of Bi4Ti3O12 grew parallel to the (0001) plane of the sapphire substrate. The deposition rate was about 200Å/min. Transmittance and refractive index of the Films were measured.
Journal
-
- Journal of the Japan Society of Powder and Powder Metallurgy
-
Journal of the Japan Society of Powder and Powder Metallurgy 39 (2), 109-112, 1992
Japan Society of Powder and Powder Metallurgy
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390282681280901376
-
- NII Article ID
- 130000818091
-
- NII Book ID
- AN00222724
-
- ISSN
- 18809014
- 05328799
-
- NDL BIB ID
- 3756465
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed