書誌事項
- タイトル別名
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- Rapid Measurement of Seebeck Coefficient by an AC Method.
- ヒカリ コウリュウホウ ニヨル ゼーベック ケイスウ ノ ジンソク ソクテイ
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An ac method for the measurement of the Seebeck coefficient was developed. Specimens were heated periodically at frequencies in the range 0.2 - 10 Hz using a semiconductor laser. The small temperature increase and the resultant thermoelectric power were measured with a Pt-Pt13%oRh, thermocouple (25 μm in diameter) through a lock-in amplifier. The Seebeck coefficient of a Pt90Rh10 foil measured by the ac method was in agreement with that obtained from the standard table. The optimum frequency and specimen thickness for the ac method were 0.2 Hz and 0.1 - 0.2 mm, respectively. The Seebeck coefficients of silicon single crystal and several thermoelectric semiconductors (Si80Ge20, PbTe, FeSi2, SiB14) measured by the ac method agreed with those measured by a conventional dc method in the temperature range between room temperature and 1200 K. The time needed for each measurement was less than a few tens of minutes, significantly shorter than that for a conventional dc method.
収録刊行物
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- 粉体および粉末冶金
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粉体および粉末冶金 44 (1), 65-69, 1997
一般社団法人 粉体粉末冶金協会
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詳細情報 詳細情報について
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- CRID
- 1390282681283697664
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- NII論文ID
- 10002013302
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- NII書誌ID
- AN00222724
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- ISSN
- 18809014
- 05328799
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- NDL書誌ID
- 4118701
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可