書誌事項
- タイトル別名
-
- Effect of Nitrogen Inclusion into Hf-Al-O Layer on Device Properties of Pt/SrBi2Ta2O9/Hf-Al-O/Si Diodes
- Pt/SrBi2Ta2O9/Hf-Al-O/Siダイオードの素子特性に及ぼすHf-Al-O層への窒素導入の効果
- Pt SrBi2Ta2O9 Hf Al O Si ダイオード ノ ソシ トクセイ ニ オヨボス Hf Al Oソウ エノ チッソ ドウニュウ ノ コウカ
この論文をさがす
説明
A metal/ferroelectric/insulator/semiconductor Pt/SrBi2Ta2O9(SBT)/Hf-Al-O(HAO)/Si is a promising gate structure for a ferroelectric-gate transistor. Effects of adding nitrogen into the HAO were investigated. Pt/SBT/HAO(N)/Si and Pt/SBT/HAO(O)/Si were prepared by depositing the HAO in N2 and O2, respectively. Nitrogen inclusion in the HAO(N) was confirmed by secondary ion mass spectrometry (SIMS). The SIMS results also indicated that diffusions of Sr, Bi and Ta into the HAO(N) were much more suppressed than those into HAO(O). Scanning transmission electron microscope (STEM) images showed that the HAO(N) was amorphous and fine while the HAO(O) was polycrystallized and rugged. The STEM image also showed an interfacial layer (IL) between the HAO and Si, grown mainly during an annealing process at 800°C for 1h for SBT polycrystallization. The major components of the IL were Si and O. The IL thicknesses of the HAO(N) and the HAO(O) were 3.4 nm and 7.4 nm respectively. Capacitance-voltage measurements of the Pt/SBT/HAO(N)/Si showed a 0.9V memory window at ±6V gate-voltage swing, which was three times larger than the memory window of the Pt/SBT/HAO(O)/Si. We concluded that adding nitrogen into the HAO of Pt/SBT/HAO/Si was effective for obtaining a large memory window by suppressing material diffusions and the IL layer growth.
収録刊行物
-
- 粉体および粉末冶金
-
粉体および粉末冶金 55 (1), 17-20, 2008
一般社団法人 粉体粉末冶金協会
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1390282681283944448
-
- NII論文ID
- 130000058050
-
- NII書誌ID
- AN00222724
-
- COI
- 1:CAS:528:DC%2BD1cXhtFSisL4%3D
-
- ISSN
- 18809014
- 05328799
-
- NDL書誌ID
- 9358361
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可
