- 【Updated on May 12, 2025】 Integration of CiNii Dissertations and CiNii Books into CiNii Research
- Trial version of CiNii Research Knowledge Graph Search feature is available on CiNii Labs
- 【Updated on June 30, 2025】Suspension and deletion of data provided by Nikkei BP
- Regarding the recording of “Research Data” and “Evidence Data”
Raman spectroscopic study of residual strain and stress in GaN layer grown on Si substrates
-
- Touko SUGIURA
- Toyota National College of Technology
-
- Yoshio HONDA
- Nagoya University
-
- Akihiro OKAMOTO
- Toyota National College of Technology
-
- Hiroyuki TAKAGI
- Toyota National College of Technology
-
- Takehiko TSUKAMOTO
- Toyota National College of Technology
-
- Hiroya ANDOH
- Toyota National College of Technology
Bibliographic Information
- Other Title
-
- ラマン分光法を用いたCaN/Siの残留歪みの評価に関する研究
- ラマン分光法を用いたGaN/Siの残留歪みの評価に関する研究
- ラマン ブンコウホウ オ モチイタ GaN Si ノ ザンリュウ ヒズミ ノ ヒョウカ ニ カンスル ケンキュウ
Search this article
Description
We have studied the residual strain and stress in semi-polar (1-101)GaN and conventional (0001)GaN grown on Si by means of Raman spectroscopy. By adopting the stress coefficients reported in the references, the residual strain of samples were deduced from the frequency shifts of the phonon modes in Raman spectra. As the results, it was found that the strain tensor of (1-101) GaN/Si was smaller than that of the (0001)GaN/Si in good agreement with the results obtained from the X-ray diffraction measurements.
Journal
-
- Journal of National Institute of Technology, Toyota College
-
Journal of National Institute of Technology, Toyota College 42 (0), 19-22, 2010
National Institute of Technology, Toyota College
- Tweet
Details 詳細情報について
-
- CRID
- 1390282681327966464
-
- NII Article ID
- 110007487133
-
- NII Book ID
- AN00176161
-
- ISSN
- 24242276
- 02862603
-
- NDL BIB ID
- 10571435
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL Search
- CiNii Articles
-
- Abstract License Flag
- Disallowed