書誌事項
- タイトル別名
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- The Effects of H2 and HF Treatments on SiC Surfaces.
- SiC キバン ヒョウメン ノ ヘイタンカ ギジュツ
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抄録
The effects of H2- and HF- on SiC{0001} surfaces interms of morphology and adsorbates have been investigated. High temperature annealing in a H2 ambient produces a flat surface without macro-step bunching for on-axis 6H-SiC(0001) and 8° off 4H-SiC(0001). Fourier-transformed infrared attenuated total reflection (FTIR-ATR) spectra show that surface Si-H bonds are formed on 6H-SiC(0001) and surface C-H bonds are formed on SiC(000¯1) by H2 treatments. The sequence of thermal oxidation and HF etching also produces on-axis 6H-SiC(0001) with a stepped morphology; however, the density of surface Si-H bonds on the SiC(0001) surface after this treatment is lower than our detection limit. The chemical characteristics of surface Si-H bonds on SiC(0001) formed by H2 treatment has also been discussed.
収録刊行物
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- 表面科学
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表面科学 21 (12), 784-790, 2000
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390282681432556800
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- NII論文ID
- 10005349060
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- NII書誌ID
- AN00334149
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- COI
- 1:CAS:528:DC%2BD3MXht1Cktb4%3D
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 5593131
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可