Metalorganic Chemical Vapor Deposition of Nitrogen-Doped ZnSe/GaAs(100) by Alternate Growth and Plasma Doping.

DOI Web Site
  • MORIMOTO Kelzo
    Research Institute for Advanced Science and Technology, Osaka Prefecture University
  • KAWAMURA Yuichi
    Research Institute for Advanced Science and Technology, Osaka Prefecture University
  • INOUE Naohisa
    Research Institute for Advanced Science and Technology, Osaka Prefecture University

Bibliographic Information

Other Title
  • 成長とプラズマドーピングを交互に行って有機金属気相成長法で作製したＮ添加ＺｎＳｅ／ＧａＡｓ（１００）

Abstract

Nitrogen-doped ZnSe layers have been grown using dimethylzinc and H2Se as precursors and N2 or N2+3H2 plasma as a dopant. With decreasing the VI/II flow ratio, N acceptors are incorporated more effectively. In the case of N2 plasma doping, the intensity of N acceptor-bound exciton emission is much higher than that of donor-bound exciton emission, but the layers exhibit n-type conductivity and the free-electron concentration increases with decreasing the VI/ II ratio. In the case of N2+3H2 plasma doping, on the other hand, the layers exhibit high resistivity and, after subsequent rapid thermal annealing at 700°C, some layers show p-type conductivity with hole concentration of∼1×1015 cm-3. This indicates that hydrogen causes not only passivation of the N acceptors but also suppression of the generation of donors. Methyl radicals play an important role in producing donor species. Prior to plasma doping, it is needed to prepare Zn-rich surface without methyl radicals in order to obtain p-type N-doped ZnSe layers.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 17 (5), 276-281, 1996

    The Surface Science Society of Japan

Details 詳細情報について

Report a problem

Back to top