書誌事項
- タイトル別名
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- Atomic-Scale Interface Characterization by STEM
- STEM ニ ヨル ザイリョウ カイメン ノ ゲンシ レベル カンサツ
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Aberration-corrected scanning transmission electron microscopy (STEM) is becoming a very powerful tool to directly characterize defect structures in materials and devices at atomic dimensions. Here, we review our recent researches on material interface characterization using STEM. First example is that the direct imaging of individual dopant atoms within a buried alumina interface. The second example is the atomic-scale characterization of Au nanoislands on TiO2 substrates. The ability to directly probe individual atoms within buried interfaces at very high-resolution will significantly assists our understanding of interface structures and related properties in many advanced materials and devices.
収録刊行物
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- 表面科学
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表面科学 34 (5), 253-258, 2013
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390282681434520960
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- NII論文ID
- 10031170839
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- NII書誌ID
- AN00334149
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- COI
- 1:CAS:528:DC%2BC3sXhsFSktr%2FL
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 024664254
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可