書誌事項
- タイトル別名
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- Crystal Growth and Device Application of Gallium Oxide (Ga<sub>2</sub>O<sub>3</sub>)
- 酸化ガリウム(Ga₂O₃)結晶成長およびデバイス応用
- サンカ ガリウム(Ga ₂ O ₃)ケッショウ セイチョウ オヨビ デバイス オウヨウ
- Crystal Growth and Device Application of Gallium Oxide (Ga2O3)
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Gallium oxide (Ga2O3) has excellent material properties for power device applications represented by the extremely large breakdown field due to a large bandgap of 4.7-4.9 eV. Another important feature in industry is that large single-crystal β-Ga2O3 bulks and wafers can be fabricated with melt-growth methods. We recently succeeded in fabricating Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) by using newly developed technologies for making single-crystal bulks, growing conductivity-controlled epitaxial films, and fabricating devices. The MOSFETs exhibited excellent device characteristics including an off-state breakdown voltage over 370 V, an extremely low leakage current, and a high on/off drain current ratio of more than ten orders of magnitude. These results indicate that Ga2O3 have comparable or even more potential than Si and typical widegap semiconductors SiC and GaN for power device applications.
収録刊行物
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- 表面科学
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表面科学 35 (2), 102-107, 2014
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390282681434613504
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- NII論文ID
- 130004785036
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- NII書誌ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 025244251
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 使用不可