書誌事項
- タイトル別名
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- Relationship between Characteristics of SiC-SBD and Surface Defect
- SiC ショットキーダイオード ノ トクセイ ト ケッカン ノ カンケイ
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抄録
The good relations between the reverse characteristics of 4H-SiC JBS diodes and the surface defects were obtained. The reverse characteristics of 4H-SiC JBS diodes were categorized in three groups as follows : (A) low blocking voltage, (B) high leakage current and (C) low leakage current. The groups of (A) and (B) were caused by the existences of the micropipe and small particles, and the carrot-like defects on the SiC surfaces, respectively. In group (C), nanosized circular cone shaped pits (nanopits) were observed at the leakage current sources. The positions of nanopits corresponded to the positions of threading dislocations.
収録刊行物
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- 表面科学
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表面科学 35 (2), 84-89, 2014
公益社団法人 日本表面科学会
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390282681434633856
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- NII論文ID
- 130004785040
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- NII書誌ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 025244212
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可